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US 12,560,865 B2Granted
Resist compound, method for forming pattern using same, and method for manufacturing semiconductor device using same
AssigneeSamsung Electronics Co., Ltd.
InventorsJin Kyun Lee, Hyun Taek Oh
Life of this patent
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Abstract
Provided are a resist compound, a method of forming a pattern by using the same, and a method of manufacturing a semiconductor device using the same. According to the present disclosure, the compound may be represented by Formula 1:
Claims17
A compound represented by Formula 1:
- wherein, in Formula 1,
- R1, R2, R3, R4, R5, R6, R7, R8, and R9 are each independently one selected from hydrogen, deuterium, and a C1-C3 alkyl,
- R10 is a single bond, a linear C1-C11 alkyl, or a branched C1-C11 alkyl,
- R20 is a C2-C11 perhalogenated alkyl or a C2-C11 perhalogenated alkyl ether perhalogenated alkyl,
- X is one selected from H, F, Cl, Br, and I,
- n is an integer from 10 to 150, and
- wherein a total number of Sn is equal to a total number of R20.
4 more elements
A method of manufacturing a semiconductor device, the method comprising:
- forming a resist film by coating a substrate with a compound represented by Formula 1;
- and
- patterning the resist film,
- wherein, in Formula 1,
- R1, R2, R3, R4, R5, R6, R7, R8, and R9 are each independently one selected from hydrogen, deuterium, and a C1-C3 alkyl,
- R10 is a single bond, a linear C1-C11 alkyl, or a branched C1-C11 alkyl,
- R20 is C2-C11 perhalogenated alkyl or C2-C11 perhalogenated alkyl ether perhalogenated alkyl,
- X is one selected from H, F, Cl, Br, and I,
- n is an integer from 10 to 150,
- wherein a total number of Sn is equal to a total number of R20.
7 more elements
Dependencies are inferred from the claim text.