Heat treatment apparatus and heat treatment method

A heat treatment apparatus, comprising:

• a heating unit configured to support and heat a substrate on which a film of a processing liquid is formed;
• a chamber surrounding the substrate supported by the heating unit;
• an exhaust unit configured to discharge a gas from an inner space of the chamber through a discharge opening located near the heating unit;
• a partition unit configured to partition the inner space of the chamber into a first space where the substrate on the heating unit is exposed and a second space located above the first space;
• and
• a switching unit configured to switch between a first state where the gas is discharged by the exhaust unit through the first space and a second state where the gas is discharged by the exhaust unit through the second space,
• wherein the discharge opening includes a first discharge opening that is opened to the first space and a second discharge opening that is opened to the second space, and
• the switching unit includes a closing member configured to open a first channel connected to the first discharge opening and close a second channel connected to the second discharge opening in the first state, and configured to close the first channel and open the second channel in the second state,
• the closing member is further configured to rotate around a central axis, between a first position corresponding to the first state and a second position corresponding to the second state.

A heat treatment method using a heat treatment apparatus equipped with a heating unit configured to support and heat a substrate;

• a chamber surrounding the substrate supported by the heating unit;
• an exhaust unit configured to discharge a gas from an inner space of the chamber through a discharge opening located near the heating unit;
• and a partition unit configured to partition the inner space of the chamber into a first space where the substrate on the heating unit is exposed and a second space located above the first space, the heat treatment method comprising:
• heating the substrate onto which a processing liquid is supplied by the heating unit;
• and
• switching between a second state where the gas is discharged by the exhaust unit through the second space at an early stage of heating the substrate and a first state where the gas is discharged by the exhaust unit through the first space at a late stage of heating the substrate,
• wherein the discharge opening includes a first discharge opening that is disposed at a side of the first space.

A heat treatment method using a heat treatment apparatus equipped with a heating unit configured to support and heat a substrate;

• a chamber surrounding the substrate supported by the heating unit;
• an exhaust unit configured to discharge a gas from an inner space of the chamber through a discharge opening located near the heating unit;
• and a partition unit configured to partition the inner space of the chamber into a first space where the substrate on the heating unit is exposed and a second space located above the first space, the heat treatment method comprising:
• heating the substrate onto which a processing liquid is supplied by the heating unit;
• and
• switching between a first state where the gas is discharged by the exhaust unit through the first space and a second state where the gas is discharged by the exhaust unit through the second space by a switching unit,
• wherein the discharge opening includes a first discharge opening that is opened to the first space and a second discharge opening that is opened to the second space,
• the switching unit includes a closing member configured to open a first channel connected to the first discharge opening and close a second channel connected to the second discharge opening in the first state, and configured to close the first channel and open the second channel in the second state, and
• the closing member is further configured to rotate around a central axis, between a first position corresponding to the first state and a second position corresponding to the second state.