MPCVD device capable of realizing effective doping

An microwave plasma chemical vapor deposition (MPCVD) device capable of realizing effective doping, characterized in that, the device comprises a reaction chamber and a gas input structure, wherein the gas input structure includes:

• a first pipeline and a second pipeline for reaction gases;
• a first gas distributor located at a top of the reaction chamber and connected with the first pipeline, that uniformly transports gas as a first reactant into the reaction chamber through a gas outlet of the first pipeline located near the top of the reaction chamber;
• a second gas distributor in the form of a gas transport ring having a circular shape, wherein the second pipeline uniformly inputs a doped reaction gas as a second reactant to a surface of a substrate through the gas transport ring, wherein a height difference in the vertical direction between the gas transport ring connected with the second pipeline and a support for the substrate is controlled within 0.5 cm, such that the doped reaction gas is transported and introduced uniformly to the surface of the substrate, and wherein the gas transport ring is concentrically placed at a center position inside the support, or concentrically placed outside the support;
• wherein the gas transport ring includes 8 to 72 jet holes, such that a uniform distribution of reactants on the substrate to be filmed can be obtained, wherein jet angles of the jet holes are within a range of −15 degrees to 15 degrees, wherein the jet angle is an included angle between a gas outlet of the jet hole and a horizontal plane.