Post chemical mechanical planarization (CMP) cleaner comprising an organic acid/anionic surfactant mixture

A post Chemical Mechanical Planarization (CMP) cleaning composition consisting of:

• A) at least one organic acid or its salt selected from the group consisting of oxalic acid, citric acid, maleic acid, malic acid, malonic acid, gluconic acid, glutaric acid, ascorbic acid, formic acid, acetic acid, ethylene diamine tetraacetic acid, glycine, α-alanine, cystine, or mixtures thereof;
• B) at least two surfactants;
• wherein the first surfactant is a diphenyl disulfonic acid or its salt, and the second surfactant is either a non-ionic surfactant comprising ethylene oxide and/or propylene oxide groups, or an anionic C12-17 alkyl sulfonic acid surfactant, or a mixture thereof, wherein the second surfactant increases the zeta potential magnitude on a surface containing dielectric material, reduces the contact angle on cleaning surfaces, and has a surface tension of <50 dynes/cm at a concentration of 0.01 wt. % in water;
• C) water;
• and
• D) optionally at least one additive selected from the group consisting of:
• 1) a fluoride compound;
• 2) a water soluble polymer or copolymer;
• 3) a corrosion inhibitor different from additive 2 and selected from the group consisting of an oligomer or polymer comprising a monomer of ethyleneimine, propyleneimine, polyethyleneimine (PEI), or combinations thereof;
• wherein the molecular weight of the oligomer or polymer ranges from between 500 and 15000 daltons;
• 4) a biological preservative;
• and
• 5) a pH adjusting agent selected from the group consisting of nitric acid, sulfonic acid, phosphoric acid, ammonia hydroxide, potassium hydroxide, sodium hydroxide, quaternary ammonium hydroxide, or mixtures thereof;
• wherein the composition has a pH of between 1 and 7.