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US 12,559,381 B2Granted
Sintered body, method of fabricating the same, semiconductor fabricating device, and method of fabricating semiconductor fabricating device
AssigneeSamsung Electronics Co., Ltd.
InventorsChang Hwan Kim, Takafumi Noguchi, Toshihiro Iizuka, Kenichi Nagayama
Life of this patent
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Abstract
A sintered body, a method of fabricating the sintered body, a semiconductor fabricating device, and a method of fabricating the semiconductor fabricating device, the sintered body including 50 mass % or more of Y5O4F7, wherein the sintered body has a relative density of 97.0% or more and a Vickers hardness of 2.4 GPa or more.
Claims12
A method of fabricating a sintered body, the method comprising:
- molding a molded body including a Y5O4F7 powder;
- forming a composite sintered body by sintering the molded body at a temperature of 1,000° C. or higher under an argon gas atmosphere or a vacuum atmosphere of 10−3 Pa or less;
- and
- selecting a sintered body from the composite sintered body, wherein the selected sintered body includes 50 mass % or more of Y5O4F7, has a relative density of 97.0% or more, and has a Vickers hardness of 2.4 GPa or more;
- wherein the selected sintered body has a whiteness L* in a Lab color space of an external color of 65 or more.
2 more elements
Dependencies are inferred from the claim text.