Direct solution deposition of metal selenide semiconductors using novel metal-selenium complexes and films made therefrom

A method of fabricating a metal selenide, comprising:

• c) preparing a solution containing polyselenide ions;
• d) dissolving at least one metal source in the solution containing polyselenide ions to yield a precursor solution, wherein the at least one metal source is selected from the group comprising elemental metals, metal containing compounds, and combinations thereof and wherein the precursor solution is substantially sulfur free;
• and
• e) dropcasting the precursor solution onto glass and annealing the precursor solution.

A method of direct deposition of multinary metal polyselenide films, consisting of:

• g) precipitating alkylammonium polyselenide with an antisolvent;
• h) redissolving precipitated alkylammonium polyselenide with a solvent to yield a solution containing polyselenide ions;
• i) dissolving at least one metal source in the solution containing polyselenide ions to yield a precursor solution, wherein the at least one metal source is selected from the group consisting of elemental metals and metal containing compounds;
• and
• j) fabricating metal polyselenides;
• wherein the at least one metal source is selected from the group consisting of Ag, Cu, Zn, Cd, In, Ga, Sn, Ge, As, Cu2Se, Cu2O, CuCl, and combinations thereof;
• and
• wherein the precursor solution is substantially sulfur-free.