Method for fabricating magnetoresistive random access memory (MRAM) device

A method for fabricating semiconductor device, comprising:

• forming a first magnetic tunneling junction (MTJ) and a second MTJ on a substrate;
• performing an atomic layer deposition (ALD) process to form a passivation layer on the first MTJ and the second MTJ and forming an opening between the first MTJ and the second MTJ;
• performing an etching process to remove part of the passivation layer while the passivation layer remaining directly contacting a top surface of the first MTJ;
• and
• forming an ultra low-k (ULK) dielectric layer on the passivation layer remaining directly on the top surface of the first MTJ.