Photodetectors with a light-absorbing layer at least partially wrapped about a waveguide core
AssigneeGlobalFoundries U.S. Inc.
InventorsZhuojie Wu, Yusheng Bian, Judson R. Holt
Life of this patent
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Abstract
Structures including a photodetector and methods of forming a structure including a photodetector. The structure comprises a semiconductor layer comprising a crystalline semiconductor material, a waveguide core including a first sidewall and a second sidewall, and a photodetector including a light-absorbing layer, an anode, and a cathode. The light-absorbing layer includes a first portion and a second portion that are disposed on the semiconductor layer. The first portion of the light-absorbing layer is adjacent to the first sidewall of the waveguide core, and the second portion of the light-absorbing layer is adjacent to the second sidewall of the waveguide core.
Claims20
A structure comprising:
- a semiconductor layer comprising a crystalline semiconductor material;
- a waveguide core including a first sidewall and a second sidewall, the waveguide core comprising a first dielectric material;
- a photodetector including a light-absorbing layer, an anode including a first doped region in a first portion of the semiconductor layer, and a cathode including a second doped region in a second portion of the semiconductor layer, the light-absorbing layer including a first portion and a second portion that are disposed on the semiconductor layer, the first portion of the light-absorbing layer adjacent to the first sidewall of the waveguide core, and the second portion of the light-absorbing layer adjacent to the second sidewall of the waveguide core;
- and
- a dielectric layer including a first portion and a second portion, the dielectric layer comprising a second dielectric material having a lower refractive index than the first dielectric material, the first portion of the dielectric layer disposed between the first sidewall of the waveguide core and the first portion of the light-absorbing layer, and the second portion of the dielectric layer disposed between the second sidewall of the waveguide core and the second portion of the light-absorbing layer.
A method comprising:
- forming an anode of a photodetector, wherein the anode includes a first doped region in a first portion of a semiconductor layer;
- forming a cathode of the photodetector, wherein the cathode includes a second doped region in a second portion of the semiconductor layer;
- forming a waveguide core that includes a first sidewall and a second sidewall, wherein the waveguide core comprises a first dielectric material;
- forming a light-absorbing layer of the photodetector, wherein the light-absorbing layer includes a first portion and a second portion that are disposed on the semiconductor layer, the semiconductor layer comprises a crystalline semiconductor material, the first portion of the light-absorbing layer is adjacent to the first sidewall of the waveguide core, and the second portion of the light-absorbing layer is adjacent to the second sidewall of the waveguide core;
- and
- forming a dielectric layer including a first portion and a second portion, wherein the dielectric layer comprises a second dielectric material having a lower refractive index than the first dielectric material, the first portion of the dielectric layer is disposed between the first sidewall of the waveguide core and the first portion of the light-absorbing layer, and the second portion of the dielectric layer is disposed between the second sidewall of the waveguide core and the second portion of the light-absorbing layer.
Dependencies are inferred from the claim text.