High power TVS with enhanced repetitive surge performance
AssigneeLittelfuse Semiconductor (Wuxi) Co., Ltd.
InventorsJifeng Zhou, Glenda Zhang, Chao Gao
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Abstract
A TVS device may include a substrate, comprising a polarity of a first type, a first dopant layer, disposed on a first main surface of the substrate, and comprising a polarity of a second type, wherein the first dopant layer forms a P/N junction with the substrate. The TVS device may further include a second dopant layer, disposed on a second main surface of the substrate, opposite the first main surface, the second layer comprising the polarity of the first type, and a patterned layer, disposed on the second main surface of the substrate, the patterned layer comprising the polarity of the second type, wherein the patterned layer is interspersed with the second layer.
Claims15
A transient voltage suppression (TVS) device, comprising:
- a substrate, comprising a polarity of a first type;
- a first dopant layer, disposed on a first main surface of the substrate, the first dopant layer comprising a polarity of a second type, wherein the first dopant layer forms a P/N junction with the substrate;
- a second dopant layer, disposed on a second main surface of the substrate, opposite the first main surface, the second dopant layer comprising the polarity of the first type;
- and
- a patterned layer, disposed on the second main surface of the substrate, the patterned layer comprising the polarity of the second type, wherein the patterned layer comprises a plurality of isolated regions interspersed with the second dopant laver, each of the plurality of isolated regions being surrounded by a portion of the second dopant layer, thereby forming a two-dimensional array of isolated regions on the second main surface.
A unidirectional transient voltage suppression (TVS) device, comprising:
- a substrate, comprising a polarity of a first type;
- a first dopant layer, disposed as a blanket layer on a first main surface of the substrate, the first dopant layer comprising a polarity of a second type, wherein the first dopant layer forms a P/N junction with the substrate;
- a second dopant layer, disposed on a second main surface of the substrate, opposite the first main surface, the second dopant layer comprising the polarity of the first type;
- and
- a patterned layer, disposed on the second main surface of the substrate, the patterned layer comprising the polarity of the second type, wherein the patterned layer comprises a plurality of isolated regions interspersed as a two-dimensional array, each of the plurality of isolated regions being surrounded by the second dopant layer, such that the first dopant layer, an interior portion of the substrate, and the second dopant layer form a first set of doped regions, and the first dopant laver, the interior portion of the substrate, and the patterned layer form a second set of doped regions on the second main surface.
Dependencies are inferred from the claim text.