Transparent heaters for improved epitaxy reactor productivity
AssigneeApplied Materials, Inc.
InventorSathya Shrinivas Chary
Life of this patent
Estimating the term…
Abstract
A method and apparatus for heating a transparent component within a semiconductor processing chamber is described. The transparent component is heated using a transparent heater coupled to the transparent component. The transparent heater includes a support base, an electrode layer, and a capping layer. The electrode layer is a heating element. The transparent heater has an optical transparency of greater than about 80% at a wavelength which is emitted by one or more radiation sources within the processing chamber. The transparent heater is a flexible transparent heater or is formed of a plurality of sub-heaters.
Claims17
A heater assembly, configured for use during semiconductor manufacturing, comprising:
- a chamber component;
- a transparent heater coupled to an outer surface of the chamber component, the transparent heater is flexible and comprises:
- a support base;
- an electrode disposed on the support base;
- and
- a capping layer disposed on a side of the electrode opposite the support base, the capping layer bonded to the chamber component;
- and
- one or more radiation sources operable to transmit heat through the chamber component, wherein a flexible transparent material of the transparent heater has an optical transparency of greater than 80% at a wavelength of radiation emitted by the one or more radiation sources.
A heater assembly, configured for use during semiconductor manufacturing, comprising:
- a transmissive window;
- a transparent heater coupled to an outer surface of the transmissive window, the transparent heater is flexible and comprises:
- a support base;
- and
- an electrode disposed on the support base, the electrode is a heating element;
- and
- one or more radiation sources operable to heat through the transmissive window, wherein a flexible transparent material of the transparent heater has an optical transparency of greater than 80% at a wavelength of radiation emitted by the one or more radiation sources.
A process chamber, configured for use during semiconductor processing, comprising:
- a chamber body;
- an upper transmissive window disposed within the chamber body;
- a lower transmissive window disposed within the chamber body;
- a substrate support disposed between the upper transmissive window and the lower transmissive window;
- one or more radiation sources operable to heat the substrate support;
- and
- a transparent heater coupled to one of the upper transmissive window or the lower transmissive window at a position between at least one of the plurality of lamps and the one of the upper transmissive window or the lower transmissive window, the transparent heater comprising:
- a support base having a transparent material,
- an electrode layer disposed on the support base and coupled to one or more lead lines, and
- a capping layer disposed over the electrode layer, the capping layer disposed between the electrode layer and the one of the upper transmissive window or the lower transmissive window.
Dependencies are inferred from the claim text.