Semiconductor device

A semiconductor device comprising:

• a region provided with a plurality of circuit blocks each including an avalanche photodiode,
• wherein a part of the plurality of circuit blocks is a pixel circuit that further includes a first control circuit configured to control the avalanche photodiode to a standby state in which an avalanche multiplication is possible and a recharging state in which the avalanche photodiode is returned to a state in which the avalanche multiplication is possible after the avalanche multiplication occurs, in response to a first control signal,
• wherein another part of the plurality of circuit blocks is a signal generation circuit configured to generate a signal according to a waveform of the first control signal,
• wherein the signal generation circuit is configured not to output a signal corresponding to an output of the avalanche photodiode,
• wherein the pixel circuit further includes a second control circuit configured to count the number of periods during which the avalanche multiplication occurs in the avalanche photodiode among periods defined by intervals of pulses on the first control signal, and
• wherein the signal generation circuit includes a third control circuit configured to count the number of periods defined by the intervals of the pulses on the first control signal.