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US 12,556,141 B2Granted
High-frequency device and Doherty amplifier
AssigneeSumitomo Electric Industries, Ltd.
InventorTatsuya Hashinaga
Life of this patent
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Abstract
A high-frequency device includes a metal base, a dielectric substrate mounted on the metal base, an insulator layer provided on the metal base, covering the dielectric substrate, and having a dielectric constant smaller than that of the dielectric substrate, and a first line that overlaps the dielectric substrate as seen from a thickness direction of the insulator layer and is provided on an upper surface of the insulator layer to form a first microstrip line.
Claims10
A high-frequency device comprising:
- a metal base;
- a dielectric substrate mounted on the metal base;
- an insulator layer provided on the metal base, covering the dielectric substrate, the insulator layer having a relative dielectric constant εrI and the dielectric substrate having a relative dielectric constant εrS, the ratio εrS/εrI being from 1.1 to 10;
- and
- a first line that overlaps the dielectric substrate as seen from a thickness direction of the insulator layer and is provided on an upper surface of the insulator layer to form a first microstrip line;
- wherein a combined thickness T=T30+T12 of (i) the dielectric substrate and (ii) a portion of the insulator layer that overlaps the dielectric substrate is 200 μm to 250 μm.
3 more elements
A Doherty amplifier comprising:
- a metal base;
- a dielectric substrate mounted on the metal base;
- an insulator layer provided on the metal base and covering the dielectric substrate, the insulator layer having a relative dielectric constant εrI and the dielectric substrate having a relative dielectric constant εrS, a ratio εrS/εrI being from 2 to 10;
- and
- a first line that overlaps the dielectric substrate as seen from a thickness direction of the insulator layer and is provided on an upper surface of the insulator layer to form a first microstrip line along with the metal base;
- wherein a combined thickness T of (i) the dielectric substrate and (ii) a portion of the insulator layer that overlaps the dielectric substrate is 200 μm to 250 μm;
- a power dividing circuit configured to divide an input signal;
- a main amplifier and a peak amplifier mounted on the metal base and respectively supplied with divided signals from the power dividing circuit;
- an output combining circuit configured to combine outputs of the main amplifier and the peak amplifier;
- and
- wiring provided on the upper surface of the insulator layer that connects a drain of the main amplifier to one end of the first microstrip line and connects another end of the first microstrip line to the output combining circuit, whereby the first microstrip line constitutes an impedance converting section in an output matching circuit of the main amplifier.
8 more elements
Dependencies are inferred from the claim text.