Light-emitting element array and method of producing light-emitting element array
AssigneeSony Semiconductor Solutions Corporation
InventorJugo Mitomo
Life of this patent
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Abstract
A Provided is a light-emitting element array that includes a plurality of light-emitting elements two-dimensionally arranged on a light-emitting element surface of the light-emitting element array, each of the plurality of light-emitting elements being a vertical cavity surface emitting laser and being formed in a mesa shape surrounded by a recessed portion formed in the light-emitting element surface, an inclined surface being formed on an outer periphery of a light-emitting element group including the plurality of light-emitting elements, a depth of the recessed portion from the light-emitting element surface gradually increasing as away from the light-emitting element group.
Claims6
A light-emitting element array, comprising:
- a substrate;
- a first contact layer on the substrate;
- a light-emitting element group that includes a plurality of light-emitting elements in a two-dimensional arrangement on a light-emitting element surface of the light-emitting element array, wherein
- each light-emitting element of the plurality of light-emitting elements is a vertical cavity surface emitting laser, and
- each light-emitting element of the plurality of light-emitting elements has a mesa shape surrounded by a recessed portion in the light-emitting element surface;
- an outer peripheral region that surrounds the light-emitting element group;
- and
- an inclined surface in the first contact layer, and on an outer periphery of the light-emitting element group, wherein
- a depth of the recessed portion from the light-emitting element surface increases from the light-emitting element group to the outer peripheral region, and
- the outer periphery is a boundary between the light-emitting element group and the outer peripheral region.
A method of producing a light-emitting element array, the method comprising:
- forming a contact layer on a substrate;
- forming a recessed portion in a light-emitting element surface of the light-emitting element array by reactive ion etching at 80° C. or less in a stacked body formed of a semiconductor material, wherein
- the forming of the recessed portion is to form a plurality of light-emitting elements in a mesa shape surrounded by the recessed portion,
- each of the plurality of light-emitting elements is a vertical cavity surface emitting laser,
- the plurality of light-emitting elements is two-dimensionally arranged on the light-emitting element surface, and
- an outer peripheral region surrounds a light-emitting element group that includes the plurality of light-emitting elements;
- and
- forming an inclined surface in the contact layer, and on an outer periphery of the light-emitting element group including the plurality of light-emitting elements, wherein
- a depth of the recessed portion from the light-emitting element surface increases from the light-emitting element group to the outer peripheral region, and
- the outer periphery is a boundary between the light-emitting element group and the outer peripheral region.
Dependencies are inferred from the claim text.