Plasma processing apparatus and semiconductor device manufacturing method

A plasma processing apparatus which generates plasma by electromagnetic waves supplied into a processing container to perform processing of a substrate, the plasma processing apparatus comprising:

• an upper electrode disposed in an upper portion of the processing container;
• a power supply member which is connected to the upper electrode to supply the electromagnetic waves to the upper electrode;
• a first shield member configured to electrically shield the upper electrode and the power supply member;
• a second shield member configured to electrically shield the upper electrode and the power supply member;
• a ring-shaped insulating member provided between the upper electrode and the first shield member and between the upper electrode and the second shield member, and having a plurality of gas through-holes penetrating an inside of the ring-shaped insulating member;
• and
• a conductive member covering a first end portion of the insulating member and electrically interconnecting the first shield member to the second shield member,
• wherein the power supply member passes through an inner space in the insulating member and supplies the electromagnetic waves to the upper electrode.