Non-volatile memory with adaptive dummy word line bias

A non-volatile storage apparatus, comprising:

• a memory structure comprising non-volatile memory cells and word lines connected to the memory cells, the word lines include data word lines and dummy word lines;
• and
• a control circuit connected to the word lines and the memory cells, the control circuit is configured to program the memory cells by:
• applying multiple program voltage pulses to the memory cells such that the program voltage pulses increase in voltage magnitude from pulse-to-pulse;
• applying a voltage to the dummy word lines while applying the program voltage pulses;
• and
• increasing voltage magnitude of the voltage applied to the dummy word lines from pulse-to-pulse such that an initial value of the voltage applied to the dummy word lines is set based on a maximum voltage of the multiple program voltage pulses.