Memory device for outputting data and method of operating the same

A memory device, comprising:

• a plurality of odd cache latches configured to output data to a first bit output line group;
• a plurality of even cache latches configured to output data to a second bit output line group, wherein the individual even cache latches of the plurality of even cache latches are arranged alternately with the individual odd cache latches of the plurality of odd cache latches;
• a sense amplifier configured to be alternately coupled to the first bit output line group and the second bit output line group and configured to output data, obtained by sensing and amplifying a voltage difference of the coupled first bit output line group or the coupled second bit output line group, to a data input/output line;
• a first precharge circuit configured to precharge the first bit output line group while the sense amplifier is coupled to the second bit output line group;
• and
• a second precharge circuit configured to precharge the second bit output line group while the sense amplifier is coupled to the first bit output line group.

A method of operating a memory device, comprising:

• coupling an odd cache latch to a first bit output line group in response to a first column selection signal;
• coupling the first bit output line group to a sense amplifier in response to a first bit output line selection signal;
• sensing a voltage difference of the first bit output line group through the sense amplifier in response to a strobe signal;
• outputting first data, obtained based on sensing the voltage difference of the first bit output line group, to a data input/output line;
• activating a precharge operation on the first bit output line group;
• coupling an even cache latch to a second bit output line group in response to a second column selection signal;
• coupling the second bit output line group to the sense amplifier in response to a second bit output line selection signal;
• sensing a voltage difference of the second bit output line group through the sense amplifier in response to the strobe signal;
• outputting second data, obtained based on sensing the voltage difference of the second bit output line group, to the data input/output line;
• and
• deactivating the precharge operation on the first bit output line group.