EUV light generation apparatus and electronic device manufacturing method

An electronic device manufacturing method, comprising:

• outputting EUV light generated by an EUV light generation apparatus to an exposure apparatus;
• and
• exposing a photosensitive substrate to the EUV light in the exposure apparatus to manufacture an electronic device, the EUV light generation apparatus including:
• a chamber;
• a target supply device configured to supply a first target into the chamber;
• a laser device configured to output first pulse laser light to be incident on the first target, output second pulse laser light to be incident on a second target generated by the first pulse laser light being incident on the first target, and be capable of adjusting a control parameter correlated with a shape of plasma generated in a plasma generation region by the second pulse laser light being incident on the second target;
• an EUV light concentrating mirror configured to reflect the EUV light emitted from the plasma and concentrate the EUV light on an intermediate focal point;
• a camera configured to image the EUV light emitted from the plasma and generate a picture including an image of the plasma;
• and
• a processor configured to obtain a value of the control parameter for improving circularity of a profile of the EUV light at the intermediate focal point by using the picture and correlation information including a correlation between the shape of the plasma and the control parameter, and output the value of the control parameter to the laser device,
• wherein the correlation information indicates a correlation among the shape of the plasma, a shape of the profile, and the control parameter,
• wherein the shape of the plasma is defined, when the plasma is assumed to be a spheroid, as two-dimensional sizes of the plasma in the picture in two directions, and the shape of the profile is defined as two-dimensional sizes corresponding to the two directions of the plasma, and
• wherein the processor measures the two-dimensional sizes of the plasma in the picture.

An electronic device manufacturing method, comprising:

• inspecting a defect of a mask by irradiating the mask with EUV light generated by an EUV light generation apparatus;
• selecting a mask using a result of the inspection;
• and
• exposing and transferring a pattern formed on the selected mask onto a photosensitive substrate, the EUV light generation apparatus including:
• a chamber;
• a target supply device configured to supply a first target into the chamber;
• a laser device configured to output first pulse laser light to be incident on the first target, output second pulse laser light to be incident on a second target generated by the first pulse laser light being incident on the first target, and be capable of adjusting a control parameter correlated with a shape of plasma generated in a plasma generation region by the second pulse laser light being incident on the second target;
• an EUV light concentrating mirror configured to reflect the EUV light emitted from the plasma and concentrate the EUV light on an intermediate focal point;
• a camera configured to image the EUV light emitted from the plasma and generate a picture including an image of the plasma;
• and
• a processor configured to obtain a value of the control parameter for improving circularity of a profile of the EUV light at the intermediate focal point by using the picture and correlation information including a correlation between the shape of the plasma and the control parameter, and output the value of the control parameter to the laser device,
• wherein the correlation information indicates a correlation among the shape of the plasma, a shape of the profile, and the control parameter,
• wherein the shape of the plasma is defined, when the plasma is assumed to be a spheroid, as two-dimensional sizes of the plasma in the picture in two directions, and the shape of the profile is defined as two-dimensional sizes corresponding to the two directions of the plasma, and
• wherein the processor measures the two-dimensional sizes of the plasma in the picture.