Back to results
US 12,554,152 B1Granted
Silicon-germanium based electro-refractive optical modulator for silicon photonics
AssigneeMarvell Asia Pte Ltd
InventorsHamed Pishvaibazargani, Jie Lin, Masaki Kato
Life of this patent
Estimating the term…
Abstract
An optical modulator includes a slab of silicon, a first layer of silicon disposed on the slab, and a second layer. The second layer includes a mixture of germanium and silicon. The second layer is at least partially disposed on the first layer. The second layer includes an intrinsic portion of the mixture and further includes first and second doped portions disposed on opposite sides of the intrinsic portion. The intrinsic portion and the first and second doped portions form an active region of the optical modulator.
Claims13
An optical modulator comprising:
- a slab of silicon comprising a first intrinsic portion and a doped portion disposed on either side of the first intrinsic portion;
- a first layer of silicon disposed on the slab, wherein the first layer of silicon comprises a second intrinsic portion and a doped portion disposed on either side of the second intrinsic portion, the second intrinsic portion at least partially overlaying the first intrinsic portion, the doped portions on either side of the second intrinsic portion at least partially overlaying the first intrinsic portion and the doped portions disposed on either side of the first intrinsic portion, respectively;
- and
- a second layer comprising a mixture of germanium and silicon, the second layer at least partially disposed on the first layer, the second layer comprising an intrinsic portion of the mixture and further comprising first and second doped portions disposed on opposite sides of the intrinsic portion of the second layer, the intrinsic portion of the second layer and the first and second doped portions forming an active region of the optical modulator, the intrinsic portion of the second layer at least partially overlaying the second intrinsic portion of the first layer, the first and second doped portions of the second layer at least partially overlaying the second intrinsic portion of the first layer and the doped portions on either side of the second intrinsic portion of the first layer, respectively;
- wherein the second intrinsic portion of the first layer comprises a well;
- and
- wherein only the intrinsic portion of the second layer extends into the well.
4 more elements
Dependencies are inferred from the claim text.