Multi-chamber apparatus and method for ALD

An atomic layer deposition apparatus comprising:

• a first single substrate process chamber bounded by a first top part and a first bottom part for accommodating a substantially flat substrate between the first top part and the first bottom part,
• wherein opposite facing surfaces of the first top part and the first bottom part are parallel to each other and to respective, top and bottom main surfaces of the substrate, upon placement of the substrate between the first top part and the first bottom part,
• wherein the first top part and the first bottom part are moveable away from and towards each other, between a process position in which the opposite facing surfaces of the first top part and the first bottom part are less than 2 mm from the respective, top and bottom main surfaces of the substrate accommodated between the first top part and the first bottom part, and a substrate loading/unloading-position in which the opposite facing surfaces of the first top part and the first bottom part are greater than 2 mm from the respective, top and bottom main surfaces of the substrate,
• wherein each of the first top part and the first bottom part comprises a plurality of gas supply openings for supplying gas between (i) the top main surface of the substrate accommodated in the first single substrate process chamber and the surface of the first top part and (ii) the bottom main surface of the substrate accommodated in the first single substrate process chamber and the surface of the first bottom part so as to form gas bearings for floatingly supporting the substrate within the first single substrate process chamber;
• a second single substrate process chamber bounded by a second top part and a second bottom part for accommodating the substantially flat substrate between the second top part and the second top bottom part,
• wherein opposite facing surfaces of the second top part and the second bottom part are parallel to each other and to the respective, top and bottom main surfaces of the substrate, upon placement of the substrate between the second top part and the second bottom part,
• wherein the second top part and the second bottom part are moveable away from and towards each other, between a process position in which the opposite facing surfaces of the second top part and the second bottom part are less than 2 mm from the respective, top and bottom main surfaces of the substrate accommodated between the second top part and the second bottom part, and a substrate loading/unloading-position in which the opposite facing surfaces of the second top part and the second bottom part are greater than 2 mm from the respective, top and bottom main surfaces of the substrate,
• wherein each of the second top part and the second bottom part comprises a plurality of gas supply openings for supplying gas between (i) the top main surface of the substrate accommodated in the second single substrate process chamber and the surface of the second top part and (ii) the bottom main surface of the substrate accommodated in the second single substrate process chamber and the surface of the second bottom part so as to form gas bearings for floatingly supporting the substrate within the second single substrate process chamber;
• and
• a transfer mechanism including a handler with at least one sealing ring with pins for supporting the substrate, the handler being configured to transfer the substrate, supported on the pins of the at least one sealing ring, between the first and the second single substrate process chambers.