Method of forming film, method of manufacturing semiconductor device, film formation apparatus, and recording medium
AssigneeKokusai Electric Corporation
InventorYuki Taira
Life of this patent
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Abstract
There is provided a technique that includes: forming a nitride film on a substrate by performing a cycle a predetermined number of times, the cycle including: (a) supplying a precursor to the substrate; (b) supplying a nitriding agent to the substrate; and (c) supplying an active species X, which is generated by plasma-exciting an inert gas, to the substrate, wherein a stress of the nitride film is controlled to be between a tensile stress and a compressive stress or is controlled to be the compressive stress by controlling an amount of exposure of the active species X to a surface of the substrate in (c).
Claims23
A method of forming a film, comprising:
- forming a nitride film on a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing:
- (a) supplying a precursor to the substrate;
- (b) supplying a nitriding agent containing hydrogen to the substrate;
- and
- (c) supplying an active species X, which is generated by plasma-exciting an inert gas, to the substrate from an outer peripheral side of the substrate without supplying any gas other than the inert gas to the substrate,
- wherein a pressure in a space where the substrate is placed in (c) is set to be lower than a pressure in the space where the substrate is placed in (b), and
- wherein a stress of the nitride film is controlled to be between a tensile stress and a compressive stress or is controlled to be the compressive stress by controlling an amount of exposure of the active species X to a surface of the substrate in (c).
A film formation apparatus comprising:
- a precursor supply system configured to supply a precursor to a substrate;
- a nitriding agent supply system configured to supply a nitriding agent containing hydrogen to the substrate;
- an inert gas supply system configured to supply an inert gas to the substrate;
- an exciter configured to plasma-excite a gas;
- and
- a controller configured to be capable of controlling the precursor supply system, the nitriding agent supply system, the inert gas supply system, and the exciter so as to perform a process including:
- forming a nitride film on the substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing:
- (a) supplying the precursor to the substrate;
- (b) supplying the nitriding agent to the substrate;
- and
- (c) supplying an active species X, which is generated by plasma-exciting the inert gas, to the substrate from an outer peripheral side of the substrate without supplying any gas other than the inert gas to the substrate,
- wherein a pressure in a space where the substrate is placed in (c) is set to be lower than a pressure in the space where the substrate is placed in (b), and
- wherein a stress of the nitride film is controlled to be between a tensile stress and a compressive stress or is controlled to be the compressive stress by controlling an amount of exposure of the active species X to a surface of the substrate in (c).
A non-transitory computer-readable recording medium storing a program that causes, by a computer, a film formation apparatus to perform a process comprising:
- forming a nitride film on a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing:
- (a) supplying a precursor to the substrate;
- (b) supplying a nitriding agent containing hydrogen to the substrate;
- and
- (c) supplying an active species X, which is generated by plasma-exciting an inert gas, to the substrate from an outer peripheral side of these substrate without supplying any gas other than the inert gas to the substrate,
- wherein a pressure in a space where the substrate is placed in (c) is set to be lower than a pressure in the space where the substrate is placed in (b), and
- wherein a stress of the nitride film is controlled to be between a tensile stress and a compressive stress or is controlled to be the compressive stress by controlling an amount of exposure of the active species X to a surface of the substrate in (c).
Dependencies are inferred from the claim text.