Manufacturing method of gallium nitride film
AssigneeJapan Display Inc.
InventorMasanobu Ikeda
Life of this patent
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Abstract
A method for manufacturing a gallium nitride film includes the steps of placing a substrate so as to face a target containing nitrogen and gallium in a vacuum chamber, supplying a sputtering gas into the vacuum chamber, supplying a nitrogen radical into the vacuum chamber, generating a plasma of the sputtering gas by application of a voltage to the target, generating a gallium ion by a collision of an ion of the sputtering gas with the target, and stopping the application of the voltage to the target and depositing gallium nitride on the substrate. The gallium nitride is generated by a reaction of the gallium ion with a nitrogen anion which is generated by a reaction of an electron in the vacuum chamber with the nitrogen radical.
Claims18
A method for manufacturing a gallium nitride film comprising:
- placing a substrate so as to face a target containing nitrogen and gallium in a vacuum chamber;
- supplying a sputtering gas into the vacuum chamber;
- supplying a nitrogen radical into the vacuum chamber;
- generating a plasma of the sputtering gas by application of a voltage to the target;
- generating a gallium ion by a collision of an ion of the sputtering gas with the target;
- and
- stopping the application of the voltage to the target and stopping the supply of the nitrogen radical into the vacuum chamber to deposit gallium nitride on the substrate, wherein the gallium nitride is generated by a reaction of the gallium ion with a nitrogen anion which is generated by a reaction of an electron in the vacuum chamber with the nitrogen radical.
A method for manufacturing a gallium nitride film comprising:
- placing a substrate so as to face a target containing nitrogen and gallium in a vacuum chamber;
- supplying a sputtering gas in the vacuum chamber;
- supplying a nitrogen radical in the vacuum chamber;
- generating a plasma of the sputtering gas by application of a voltage to the target;
- generating a gallium ion by a collision of an ion of the sputtering gas with the target;
- and
- stopping the application of the voltage to the target and depositing-stopping the supply of the nitrogen radical into the vacuum chamber to deposit gallium nitride on the substrate, wherein the gallium nitride is generated by a reaction of the gallium ion with a nitride anion which is generated by a reaction of a nitrogen atom generated using the sputtering gas in a metastable state in the vacuum chamber with an electron in the vacuum chamber.
Dependencies are inferred from the claim text.