Process for removing tin oxide deposits
AssigneeSeastar Chemicals Ulc
InventorsDiana Fabulyak, Rajesh Odedra, Wesley Phillip Graff, Shaun Cembella, Cassidy Conover
Life of this patent
Estimating the term…
Abstract
Specific organometallic compounds of Formula I: Qx-Sn-(A1R1′z)4-x or Formula II: Sn(NR2(CH2)nA2)2 useful for the deposition of high purity tin oxide, as well as methods of using such compounds are disclosed. Also disclosed are compositions of organometallic compounds useful for the deposition of high purity tin oxide that in combination improve stability. Also disclosed are processes for dry etching tin oxide with a particular etchant gas and/or a process for dry etching a substrate using a particular etchant gas with a specific additive.
Claims14
A process for removing deposits from interior surfaces of a reactor chamber or from a substrate within said reactor chamber, comprising:
- introducing an etchant gas and additive into said reactor chamber, said etchant gas being of the general formula A3OmXn, wherein:
- A3 is selected from the group consisting of N and S,
- O is oxygen,
- each X is independently selected from a group consisting of halogens,
- the subscripts m and n are integers from 1 and 2, and
- said additive is CO or CO2;
- activating said etchant gas either before or after said introduction;
- allowing an etching reaction to proceed between said activated etchant gas and said deposits;
- and
- evacuating the etchant gas together with gaseous products of the etching reaction.
Dependencies are inferred from the claim text.