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US 12,550,799 B2Granted
Direct bonding methods and structures
AssigneeAdeia Semiconductor Bonding Technologies Inc.
InventorsCyprian Emeka Uzoh, Thomas Workman
Life of this patent
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Abstract
Disclosed herein are methods for direct bonding. In some embodiments, a direct bonding method comprises preparing a first bonding surface of a first element for direct bonding to a second bonding surface of a second element; and after the preparing, providing a protective layer over the prepared first bonding surface of the first element, the protective layer having a thickness less than 3 microns.
Claims19
A bonding method comprising:
- preparing a first bonding surface of a first element for direct bonding to a second bonding surface of a second element, wherein preparing the first bonding surface comprises plasma activating the first bonding surface;
- and
- after the preparing, providing a protective layer over at least a portion of the prepared first bonding surface of the first element, the protective layer having a thickness less than 3 microns.
A bonding method comprising:
- preparing a first bonding surface of a first element for direct bonding to a second bonding surface of a second element;
- and
- after the preparing, selectively providing a protective layer over a plurality of contact pads of the first bonding surface without blanket depositing the protective layer over the first bonding surface.
A bonding method comprising:
- preparing a first bonding surface of a first element for direct bonding to a second bonding surface of a second element;
- and
- after the preparing, selectively providing a passivation layer over a plurality of contact pads of the first bonding surface without blanket depositing the passivation layer over the first bonding surface.
Dependencies are inferred from the claim text.