Integrated circuit package and method
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChen-Hua Yu, Yung-Chi Lin, Wen-Chih Chiou
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Abstract
A device package includes a first die directly bonded to a second die at an interface, wherein the interface comprises a conductor-to-conductor bond. The device package further includes an encapsulant surrounding the first die and the second die and a plurality of through vias extending through the encapsulant. The plurality of through vias are disposed adjacent the first die and the second die. The device package further includes a plurality of thermal vias extending through the encapsulant and a redistribution structure electrically connected to the first die, the second die, and the plurality of through vias. The plurality of thermal vias is disposed on a surface of the second die and adjacent the first die.
Claims20
A device package comprising:
- a first die;
- a second die over the first die and bonded to the first die at an interface, wherein the interface between the first die and the second die comprises a metal-to-metal bond;
- an insulating material surrounding the second die;
- a first insulating bonding layer over and physically contacting the second die and the insulating material;
- and
- a semiconductor substrate bonded to the first insulating bonding layer by a second insulating bonding layer, wherein the second insulating bonding layer extends continuously from the first insulating bonding layer to the semiconductor substrate.
A device package comprising:
- a first die comprising a first semiconductor substrate;
- a second die over and bonded to the first die at an interface, wherein the interface comprises a metal-to-metal bond;
- a first insulating bonding layer over and physically contacting a second semiconductor substrate of the second die;
- and
- a third semiconductor substrate bonded to the first insulating bonding layer by a second insulating bonding layer, wherein the second insulating bonding layer physically contacts the third semiconductor substrate and the first insulating bonding layer.
A device package comprising:
- a first integrated circuit die;
- a second integrated circuit die bonded to the first integrated circuit die at an interface, wherein the interface comprises a metal-to-metal bond and a dielectric-to-dielectric bond;
- a first conductive bonding structure contacting the second integrated circuit die, wherein the first conductive bonding structure comprises a first plurality of stacked metal layers;
- and
- a semiconductor substrate bonded to the first conductive bonding structure by a second conductive bonding structure, wherein the first conductive bonding structure and the second conductive bonding structure are directly bonded together.
Dependencies are inferred from the claim text.