Wafer total thickness variation using maskless implant

Abstract

Embodiments herein are directed to localized wafer thickness correction. In some embodiments, a method may include providing a substrate including an upper surface having a raised portion extending above a plane defined by the upper surface, and a non-raised portion adjacent the raised portion. The method may further include performing a metrology scan of the upper surface to determine a first dimension of the raised portion and a second dimension of the non-raised portion, and depositing a hardmask over the upper surface, including over the raised portion and the non-raised portion. The method may further include directing ions to the hardmask, wherein a first dose of the ions over the raised portion is greater than a second dose of the ions over the non-raised portion, and performing a first etch to the hardmask to remove the hardmask over the raised portion, wherein the hardmask remains over the non-raised portion.

Dependencies are inferred from the claim text.