Techniques for MRAM MTJ top electrode connection

An integrated chip, comprising:

• a first dielectric layer overlying a substrate;
• a memory cell disposed within the first dielectric layer, wherein the memory cell comprises a top electrode overlying a data storage structure;
• an upper conductive structure overlying and directly contacting a top surface of the top electrode, wherein the upper conductive structure comprises a first outer sidewall and a second outer sidewall, wherein a first segment of a bottom surface of the upper conductive structure contacting a bottom point of the first outer sidewall and adjacent to a first sidewall of the top electrode is above a second segment of the bottom surface of the upper conductive structure contacting a bottom point of the second outer sidewall and adjacent to a second sidewall of the top electrode, wherein the bottom surface of the upper conductive structure comprises a curved segment between the first segment and the second segment, wherein the curved segment intersects a vertical line arranged at a midpoint of the bottom surface of the upper conductive structure;
• a first spacer contacting the first sidewall of the top electrode, wherein an upper surface of the first spacer is curved, wherein the first spacer is a single continuous layer vertically extending from a bottom surface of the top electrode to the top surface of the top electrode, and wherein the first spacer is directly connected to the first segment of the bottom surface of the upper conductive structure;
• and
• a second spacer contacting the second sidewall of the top electrode, wherein an upper surface of the second spacer is curved.

An integrated chip, comprising:

• a magnetic tunnel junction (MTJ) overlying a substrate;
• a top electrode contacting the MTJ, wherein a first segment of a top surface of the top electrode adjacent to a first sidewall of the top electrode is different from a second segment of the top surface of the top electrode adjacent to a second sidewall of the top electrode, wherein the top surface of the top electrode comprises a curved segment between the first segment and the second segment;
• a sidewall spacer layer overlying the substrate and contacting the MTJ, wherein the sidewall spacer layer is a single continuous layer and comprises:
• a first spacer segment on the first sidewall of the top electrode;
• and
• a second spacer segment on the second sidewall of the top electrode, wherein the first spacer segment and the second spacer segment continuously vertically extend from a bottom surface of the top electrode to the top surface of the top electrode;
• a first dielectric layer around the MTJ and the top electrode;
• and
• a conductive structure directly contacting the top electrode, the first spacer segment, and the second spacer segment, wherein the conductive structure directly contacts the first segment, the second segment, and the curved segment of the top surface of the top electrode, wherein a top surface of the conductive structure overlaps a sidewall of the first spacer segment and a sidewall of the second spacer segment, wherein a bottom point of an outermost sidewall of the conductive structure physically contacts a top point of the second sidewall of the top electrode.