Micro optoelectronic device

An optoelectronic device, the device comprising:

• doped and blocking layers;
• a functional layer;
• the doped, blocking, and functional layers etched on isolated structures;
• the isolated structures comprising in part of ohmic layers;
• the isolated structures being located on top and bottom of the device;
• common electrodes connected to the isolated structures and on top of a planarized layer higher than the ohmic layer and thicker than the isolated structures such that any pressure to the common electrodes is not directly passed to the isolated structures;
• dielectric layers deposited to cover at least a side of the isolated structures and to cover an area between the isolated structures;
• conductive layers on open areas of the isolated structures;
• and
• passivation layers formed to cover the dielectric layers and fill a surface of the optoelectronic device.