Device with a detection structure with coulomb blockade superimposed on a quantum dot
AssigneeCommissariat A L'energie Atomique Et Aux Energies Alternatives
InventorsBenoit Bertrand, Pierre-André Mortemousque
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Abstract
A quantum device formed from a substrate, the substrate being covered with a semiconductor region forming a quantum dot, and a detection structure with a Coulomb blockade for detecting a state of charge of the quantum dot, the detection structure with the Coulomb blockade including a detection island disposed above and facing the quantum dot and coupled to the quantum dot by electrostatic coupling, the detection structure further including a first tunnel junction between the detection island and a first gate block, the first gate block being juxtaposed with the detection island.
Claims21
A quantum device formed on a substrate, the quantum device comprising:
- a first level in which a semiconductor region is arranged, a quantum dot being provided in the semiconductor region, and
- a second level in which a first gate block is arranged and configured to modulate a potential of the quantum dot formed in the semiconductor region,
- the second level further comprising a detection structure to detect a state of charge of the quantum dot, said detection structure including a detection island disposed above and facing the semiconductor region and coupled to the quantum dot by capacitive coupling,
- the first gate block being juxtaposed with said detection island,
- the detection island and the first gate block being separated by a dielectric region, and
- wherein the detection island, the dielectric region, and the first gate block form a first tunnel junction.
A quantum device formed on a substrate, the quantum device comprising:
- a first level in which a semiconductor region is arranged, a quantum dot being provided in the semiconductor region, and
- a second level in which a first gate block is arranged and configured to modulate a potential of the quantum dot formed in the semiconductor region,
- the second level further comprising a detection structure to detect a state of charge of the quantum dot, said detection structure including a detection island disposed above and facing the semiconductor region and coupled to the quantum dot by capacitive coupling,
- the first gate block being juxtaposed with said detection island,
- the detection island and the first gate block being separated by a dielectric region,
- wherein the detection island, the dielectric region, and the first gate block form a first tunnel junction, and
- wherein the first gate block is configured to form a reservoir of charges for the detection island when the first tunnel junction is biased.
Dependencies are inferred from the claim text.