US 12,548,591 B1 · Magnetic device utilizing silicon based spin-to-charge or charge-to-spin conversion layer

Abstract

A read head having a spin-to-charge or charge-to-spin sensing layer comprising amorphous materials, e.g. FeSi or CoSi, omits the need for a crystalline seed layer. Unlike many other material candidates (e.g., BiSb, YBiPt), amorphous sensing layers do not require crystalline seed layers for growth and still exhibit adequate signal. Since seed layers are no longer needed for growth, signal shunting from the seed layer is eliminated and read heads having bottom and top structures may be more easily designed. Furthermore, FeSi and CoSi have increased thermal stability over most material candidates for sensing layers. Accordingly, amorphous sensing layers, such as FeSi or CoSi, are better suited to survive the annealing process of read heads. Thus, the use of FeSi or CoSi, in the sensing layer, results in a better performing, customizable, thermally stable read head.

Claims25

Dependent claims

A magnetic device, comprising:

a lead;
a sensing layer disposed over the lead, wherein the sensing layer comprises a silicon-containing amorphous material;
a free layer;
and
a cap layer, wherein the free layer is disposed between the sensing layer and the cap layer, wherein the magnetic device is a current-perpendicular-to-the-plane (CPP) spin-to-charge, four terminal device, and wherein a voltage signal generated by the sensing layer is via inverse spin Hall effect, inverse orbital Hall effect, anomalous Nernst effect, or anomalous Hall effect.

2 more elements

Dependencies are inferred from the claim text.

Magnetic device utilizing silicon based spin-to-charge or charge-to-spin conversion layer

Life of this patent

Magnetic device utilizing silicon based spin-to-charge or charge-to-spin conversion layer

Life of this patent

Abstract

Claims25