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US 12,545,863 B2Granted
Method for cleaning semiconductor substrate, method for producing processed semiconductor substrate, and stripping composition
AssigneeNissan Chemical Corporation
InventorsTakahisa Okuno, Masaki Yanai, Takuya Fukuda, Hiroto Ogata, Shunsuke Moriya, Hiroshi Ogino, Tetsuya Shinjo
Life of this patent
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Abstract
A semiconductor substrate cleaning method including removing an adhesive layer provided on a semiconductor substrate by use of a remover composition, wherein the remover composition contains a solvent but no salt; and the solvent includes an organic solvent represented by any of formulae (L0) to (L4).
Claims6
A semiconductor substrate cleaning method comprising removing an adhesive layer provided on a semiconductor substrate by use of a remover composition, wherein
- the adhesive layer is a film formed from an adhesive composition comprising an adhesive component(S) containing a siloxane adhesive which comprises a polyorganosiloxane component (A) being curable through hydrosilylation;
- the polyorganosiloxane component (A) comprises a polysiloxane (A1) having one or more units selected from the group consisting of a siloxane unit represented by SiO2 (unit Q), a siloxane unit represented by R1R2R3SiO1/2 (unit M), a siloxane unit represented by R4R5SiO2/2 (unit D), and a siloxane unit represented by R6SiO3/2 (unit T), and a platinum group metal catalyst (A2);
- wherein the polysiloxane (A1) comprises a polyorganosiloxane (a1) having one or more units selected from the group consisting of a siloxane unit represented by SiO2 (unit Q′), a siloxane unit represented by R1′R2′R3′SiO1/2 (unit M′), a siloxane unit represented by R4′R5′SiO2/2 (unit D′), and a siloxane unit represented by R6′SiO3/2 (unit T′), and at least one unit selected from the group consisting of unit M′, unit D′, and unit T′, and a polyorganosiloxane (a2) having one or more units selected from the group consisting of a siloxane unit represented by SiO2 (unit Q″), a siloxane unit represented by R1″R2″R3″SiO1/2 (unit M″), a siloxane unit represented by R4″R5″SiO2/2 (unit D″), and a siloxane unit represented by R6″SiO3/2 (unit T″) and at least one unit selected from the group consisting of unit M″, unit D″, and unit T″;
- each of R1 to R6 is a group or an atom bonded to a silicon atom and represents an alkyl group, an alkenyl group, or a hydrogen atom, each of R1′ to R6′ is a group bonded to a silicon atom and represents an alkyl group or an alkenyl group, and at least one of R1′ to R6′ is an alkenyl group, each of R1″ to R6″ is a group or an atom bonded to a silicon atom and represents an alkyl group or a hydrogen atom, and at least one of R1″ to R6″ is a hydrogen atom;
- the remover composition contains a solvent but no salt;
- and
- the solvent includes an organic solvent represented by any of formulae (L0) to (L4):
- (wherein each of L101 to L112 independently represents a hydrogen atom, a C1 to C5 alkyl group, a C2 to C5 alkenyl group, or a C2 to C5 alkynyl group, and at least one of L101 to L112 represents a C1 to C5 alkyl group, a C2 to C5 alkenyl group, or a C2 to C5 alkynyl group;
- each of L201 to L210 independently represents a hydrogen atom, a C1 to C5 alkyl group, a C2 to C5 alkenyl group, or a C2 to C5 alkynyl group, and at least one of L201 to L210 represents a C1 to C5 alkyl group, a C2 to C5 alkenyl group, or a C2 to C5 alkynyl group;
- each of L301 to L308 independently represents a hydrogen atom, a C1 to C5 alkyl group, a C2 to C5 alkenyl group, or a C2 to C5 alkynyl group, and at least one of L301 to L308 represents a C1 to C5 alkyl group, a C2 to C5 alkenyl group, or a C2 to C5 alkynyl group;
- and each of L401 to L408 independently represents a hydrogen atom, a C1 to C5 alkyl group, a C2 to C5 alkenyl group, or a C2 to C5 alkynyl group, and at least one of L401 to L408 represents a C1 to C5 alkyl group, a C2 to C5 alkenyl group, or a C2 to C5 alkynyl group) in an amount of 80 mass % or more.
8 more elements
Dependencies are inferred from the claim text.