Method to connect power terminal to substrate within semiconductor package
AssigneeLittelfuse, Inc.
InventorsThomas Spann, Elaheh Arjmand
Life of this patent
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Abstract
A method of manufacturing a power semiconductor device in accordance with an embodiment of the present disclosure may include providing a substrate disposed atop a heatsink, electrically connecting a semiconductor die to a top surface of the substrate, disposing a thin metallic layer atop the substrate, disposing a terminal atop the thin metallic layer, and performing a welding operation wherein a laser beam is directed at a top surface of the terminal to produce a plurality of weld connections connecting the terminal to the substrate, wherein the weld connections are separated by gaps, and wherein heat generated during the welding operation melts the thin metallic layer and molten material of the thin metallic flows into the gaps.
Claims9
A power semiconductor device comprising:
- a heatsink;
- a substrate disposed atop the heatsink;
- a semiconductor die disposed atop the substrate and electrically connected to the substrate;
- and
- a terminal disposed atop the substrate and electrically connected to the substrate by laser-formed weld connections separated by gaps, wherein a thin metallic layer disposed between the terminal and the substrate is melted during the laser welding operation and molten material of the thin metallic layer flows into and fills the gaps between the weld connections;
- wherein the thin metallic layer has a thickness in a range of 20-100 μm.
Dependencies are inferred from the claim text.