Manufacturing method of semiconductor device
AssigneeSK hynix Inc.
InventorJin Ha Kim
Life of this patent
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Abstract
A method of manufacturing a semiconductor device includes forming a cell chip including a first substrate, a source layer on the first substrate, a stacked structure on the source layer, and a channel layer passing through the stacked structure and coupled to the source layer, flipping the cell chip, exposing a rear surface of the source layer by removing the first substrate from the cell chip, performing surface treatment on the rear surface of the source layer to reduce a resistance of the source layer, forming a peripheral circuit chip including a second substrate and a circuit on the second substrate, and bonding the cell chip including the source layer with a reduced resistance to the peripheral circuit chip.
Claims9
A method of manufacturing a semiconductor device, the method comprising:
- forming a cell chip including a first substrate, a polysilicon layer over the first substrate, and a stacked structure over the polysilicon layer, wherein the stacked structure includes a cell region in which memory cells are stacked on top of one another;
- removing at least a portion of the first substrate overlapping the cell region of the stacked structure to expose a rear surface of the polysilicon layer, wherein the rear surface faces a direction opposite to a direction facing the stacked structure;
- and
- performing surface treatment on the rear surface of the polysilicon layer, wherein the surface treatment includes a laser irradiation on the rear surface as a target.
Dependencies are inferred from the claim text.