Chemical mechanical polishing cleaning system with temperature control for defect reduction

A method for processing a substrate, comprising:

• planarizing a surface of the substrate by a chemical mechanical polishing (CMP) process, the CMP process generating contaminants on the surface of the substrate;
• cleaning the substrate in a first cleaning module with a cleaning solution of a target temperature, wherein the first cleaning module is operated to remove the contaminants from the substrate using a megasonic acoustic energy;
• cleaning the substrate in a second cleaning module with the cleaning solution of the target temperature, wherein the second cleaning module is operated to remove the contaminants from the substrate by scrubbing a front side surface of the substrate using a cleaning pad;
• and
• cleaning the substrate in a third cleaning module with the cleaning solution of the target temperature, wherein the third cleaning module is operated to remove the contaminants from the substrate by simultaneously scrubbing the front side surface and a backside surface of the substrate using a pair of brushes,
• wherein the cleaning solution of the target temperature is supplied from a cleaning solution supply system comprising a temperature control system operated to produce the cleaning solution of the target temperature, the temperature control system comprising:
• a heating device configured to heat the cleaning solution;
• a cooling device configured to cool the cleaning solution;
• a temperature sensor configured to monitor a temperature of the cleaning solution;
• and
• a temperature controller configured to control a temperature of the cleaning solution;
• and
• wherein producing the cleaning solution of the target temperature comprises:
• monitoring a temperature of the cleaning solution;
• comparing the temperature of the cleaning solution with the target temperature;
• and
• heating or cooling the cleaning solution until the target temperature is reached.

A method for processing a substrate, comprising:

• performing a chemical mechanical polishing (CMP) process to planarize a surface of the substrate, the CMP process generating contaminants on the surface of the substrate;
• and
• performing a multi-stage cleaning process to remove the contaminants from the surface of the substrate, comprising:
• supplying a first cleaning solution of a first temperature to a first cleaning module, the first cleaning module comprising a tank to hold a first cleaning solution therein, a holder configured to vertically support the substrate during cleaning, and a transducer configured to transmit a megasonic acoustic energy to the first cleaning solution to agitate the first cleaning solution
• performing a first cleaning process using the first cleaning module;
• supplying a second cleaning solution of a second temperature to a second cleaning module, the second cleaning module comprising a platen configured to support the substrate, a cleaning pad configured to scrub a front side surface of the substrate, and a pair of first spray bars configured to spray a second cleaning solution to the front side surface and a backside surface of the substrate, respectively;
• performing a second cleaning process after the first cleaning process using the second cleaning module;
• supplying a third cleaning solution of a third temperature to a third cleaning module, the third cleaning module comprising a pair of brushes configured to scrub front side and backside surfaces of the substrate, and a pair of second spray bars configured to spray a third cleaning solution to the front side and backside surfaces of the substrate, respectively;
• and
• performing a third cleaning process after the second cleaning process using the third cleaning module,
• wherein each of the first temperature, the second temperature and the third temperature is controlled by a corresponding temperature control system, wherein controlling the first temperature, the second temperature and the third temperature comprises:
• comparing a temperature of each of the first cleaning solution, the second cleaning solution and the third cleaning solution with a corresponding target temperature;
• heating or cooling the first cleaning solution to reach the first temperature;
• heating or cooling the second cleaning solution to reach the second temperature;
• and
• heating or cooling the third cleaning solution to reach the third temperature.