Resonant cavity micro-LED array using embedded reflector
AssigneeGenesee Valley Innovations, LLC
InventorsThomas Wunderer, Max Batres, Chris Chua
Life of this patent
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Abstract
A light emitting diode (LED) array includes bottom reflectors patterned as an array of closed shapes on a top plane of a base layer for III-N growth. A three-dimensional III-N structure is epitaxially grown around the array of closed shapes and extending above the bottom reflectors. The three-dimensional III-N structures is a contiguous crystalline structure extending across the array. A laterally grown III-N layer is formed in contact with both the reflectors and the three-dimensional III-N structures, and III-N LED layers are grown on the laterally grown layer. One or more top reflectors are grown or deposited on the III-N LED layers and located over the bottom reflectors.
Claims21
A light emitting diode (LED) array comprising:
- a semiconductor base layer for III-N growth;
- bottom reflectors patterned as an array of closed shapes on a top plane of the base layer;
- a three-dimensional III-N structure epitaxially grown around the array of closed shapes and extending above the bottom reflectors, the three-dimensional III-N structure being a contiguous crystalline structure extending across the array;
- a laterally grown III-N layer formed in contact with both the reflectors and the three-dimensional III-N structure;
- III-N LED layers grown on the laterally grown III-N layer;
- one or more top reflectors grown or deposited on the III-N LED layers and located over the bottom reflectors;
- and
- an array of electrical contacts coupled to respective p-type materials and n-type materials of the III-N LED layers, current delivered by the electrical contacts causing non-coherent, spontaneous light emissions through one of the top reflectors or the bottom reflectors.
A light emitting diode (LED) comprising:
- a semiconductor base layer for III-N growth;
- a bottom reflector patterned as a closed shape on a top plane of the base layer;
- a three-dimensional III-N structure epitaxially grown around the closed shapes and extending above the bottom reflector;
- a laterally grown III-N layer formed in contact with both the reflector and the three-dimensional III-N structure;
- III-N LED layers grown on the laterally grown III-N layer;
- a top reflector grown or deposited on the III-N LED layers and located over the bottom reflector, the top reflector comprising a metal film;
- and
- electrical contacts coupled to respective p-type materials and n-type materials of the III-N LED layers, current delivered by the electrical contacts causing non-coherent, spontaneous light emissions through one of the top reflector or the bottom reflector.
A method comprising:
- patterning bottom reflectors as an array of closed shapes on a top plane of a base layer for epitaxial growth of III-N materials;
- selectively growing epitaxial three-dimensional III-N structures around and extending above the array of closed shapes, the three-dimensional III-N structures being a contiguous crystalline structure that extends across the array of closed shapes;
- laterally growing a III-N layer in contact with both the bottom reflectors and the three-dimensional III-N structures;
- growing III-N LED layers on the laterally grown III-N layer;
- depositing or growing one or more top reflectors on the III-N LED layers;
- and
- depositing electrical contacts on respective p-type material and n-type material of the III-N LED layers.
Dependencies are inferred from the claim text.