Semiconductor device, fabrication method for same, and electronic device comprising same
AssigneeInstitute of Microelectronics, Chinese Academy of Sciences
InventorHuilong Zhu
Life of this patent
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Abstract
Provided are a semiconductor device, a method of manufacturing the semiconductor device, and an electronic apparatus including the semiconductor device. According to the embodiments, the semiconductor device may include: a vertical structure extending in a vertical direction relative to a substrate; and a nanosheet extending from the vertical structure and spaced apart from the substrate in the vertical direction, wherein the nanosheet includes a first portion in a first orientation, and at least one of an upper surface and a lower surface of the first portion is not parallel to a horizontal surface of the substrate.
Claims37
A semiconductor device, comprising:
- a vertical structure extending in a vertical direction relative to a substrate;
- and
- a nanosheet extending from the vertical structure and spaced apart from the substrate in the vertical direction, wherein the nanosheet comprises a first portion in a first orientation, and at least one of an upper surface and a lower surface of the first portion is not parallel to a horizontal surface of the substrate,
- wherein the nanosheet further comprises a second portion extending in a direction parallel to the substrate.
A semiconductor device, comprising:
- a first device and a second device on a substrate, wherein the first device comprises a first vertical structure extending in a vertical direction relative to the substrate, and a first nanosheet extending from the first vertical structure and spaced apart from the substrate in the vertical direction, and the second device comprises a second vertical structure extending in the vertical direction relative to the substrate, and a second nanosheet extending from the second vertical structure and spaced apart from the substrate in the vertical direction,
- wherein the first nanosheet comprises a first portion in a first orientation, and the second nanosheet comprises a second portion in a second orientation different from the first orientation,
- wherein the first nanosheet further comprises a third portion extending in a direction parallel to the substrate.
A method of manufacturing a semiconductor device, comprising:
- forming a position maintaining layer on a substrate;
- forming a pattern on the position maintaining layer, wherein the pattern comprises a first surface in a first orientation, and the first surface is not parallel to a horizontal surface of the substrate;
- forming a stack layer of alternately arranged sacrificial layer and channel layer on the position maintaining layer formed with the pattern;
- forming a first trench extending in a first direction in the stack layer, wherein the first trench extends into the substrate;
- forming a vertical structure connected with the channel layer in the first trench;
- and
- forming a second trench extending in a second direction in the stack layer, wherein the second direction intersects the first direction, the second trench exposes the position maintaining layer, and the first trench and the second trench define a stripe-shaped portion of the stack layer extending in the first direction,
- wherein the pattern further comprises a second surface parallel to the substrate.
Dependencies are inferred from the claim text.