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US 12,543,328 B2Granted
Inductive device structure and process method
AssigneeQUALCOMM Incorporated
InventorsJe-Hsiung Lan, Jonghae Kim, Jui-Yi Chiu, Kai Liu, Nosun Park
Life of this patent
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Abstract
A device is described. The device includes a substrate having a first cavity. The device also includes a first redistribution layer (RDL) on sidewalls and a base of the first cavity in the substrate and on a first surface of the substrate. The device further includes a fill material in the first cavity.
Claims11
A device, comprising:
- a substrate;
- a first redistribution layer (RDL) on sidewalls and a base of a first cavity in the substrate and on a first surface of the substrate;
- and
- a fill material in the first cavity, wherein the first RDL is on opposing sidewalls of the first cavity and a width of the first RDL is less than a width of the first cavity.
1 more element
A device, comprising:
- a substrate;
- a first redistribution layer (RDL) on sidewalls and a base of a first cavity in the substrate and on a first surface of the substrate;
- a fill material in the first cavity;
- a second redistribution layer (RDL) on sidewalls and a base of a second cavity in the substrate and on a second surface opposite the first surface of the substrate;
- the fill material in the second cavity;
- and
- a through via extending from the first surface to the second surface of the substrate and coupled to the second RDL.
4 more elements
A device, comprising:
- a substrate;
- a first redistribution layer (RDL) on sidewalls and a base of a first cavity in the substrate and on a first surface of the substrate;
- a fill material in the first cavity;
- and
- conductive interconnects coupled to a portion of the first RDL on the first surface of the substrate.
2 more elements
Dependencies are inferred from the claim text.