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US 12,543,305 B2Granted
Memory device
AssigneeSamsung Electronics Co., Ltd.
InventorsMin Tae Ryu, Byong-Deok Choi, Sungwon Yoo, Wonsok Lee, Yongsang Yoo
Life of this patent
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Abstract
A memory device includes a first memory cell connected to a first bitline and a second memory cell connected to a second bitline, wherein the first memory cell may include a first access transistor including one end connected to the first bitline, and a first capacitor including one electrode connected to another end of the first access transistor and another electrode connected to the second bitline, and the first access transistor may include an oxide semiconductor.
Claims12
A memory device, comprising:
- a first memory cell connected to a first bitline and a second memory cell connected to a second bitline,
- wherein the first memory cell includes:
- a first access transistor including one end connected to the first bitline;
- and
- a first capacitor including one electrode connected to another end of the first access transistor and another electrode connected to the second bitline,
- wherein the first access transistor includes a semiconductor layer and a gate layer overlapping the semiconductor layer in a vertical direction perpendicular to an upper surface of the semiconductor layer, and
- wherein the semiconductor layer includes an oxide semiconductor material.
4 more elements
A memory device, comprising:
- a first memory cell connected to a first bitline and a second bitline;
- and
- a sense amplification circuit connected to the first bitline and the second bitline, and configured to amplify a sense voltage that is a voltage difference between the first bitline and the second bitline,
- wherein the first memory cell includes:
- a first access transistor connected to the first bitline;
- and
- a first capacitor connected to the second bitline,
- wherein the first access transistor includes a semiconductor layer and a gate layer overlapping the semiconductor layer in a vertical direction perpendicular to an upper surface of the semiconductor layer, and
- wherein the semiconductor layer includes an oxide semiconductor material.
6 more elements
Dependencies are inferred from the claim text.