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US 12,541,440 B2Granted
Redundancy and swapping scheme for memory repair
AssigneeMicron Technology, Inc.
InventorsJaeil Kim, Simon J. Lovett
Life of this patent
Estimating the term…
Abstract
A memory device can include a bank of memory cells. The bank of memory cells can include multiple groups of columns of memory cells. The memory device can include controller circuitry to provide information pertaining to a column repair redundancy swap for repairing a selected group of the plurality of groups at row address strobe (RAS) time. Upon detection of an error condition in at least one group of columns of memory cells, the controller circuitry can implement the column repair redundancy swap on the corresponding group.
Claims22
A memory device, comprising:
- a bank of memory cells, the bank including a plurality of groups of columns of memory cells;
- and
- controller circuitry configured to:
- provide, during a row address strobe (RAS) time, information pertaining to a column repair redundancy swap for repairing a selected group of the plurality of groups, the information including a column redundancy signal and swap enabling signals;
- and
- responsive to detecting that an error condition has occurred in a failed group of the plurality of groups, implement the column repair redundancy swap for at least one column of the failed group.
3 more elements
A method comprising:
- providing, during a row address strobe (RAS) time, a column redundancy signal and swap enabling signals;
- and
- during the RAS time, performing a column repair for a selected group of a plurality of groups of columns of memory cells based on the column redundancy signal and the swap enabling signals and responsive to detecting that an error condition has occurred in a failed group of the plurality of groups.
A system comprising:
- a host device;
- and
- a memory device coupled to the host device, the memory device comprising:
- a bank of memory cells, the bank including a plurality of groups of columns of memory cells;
- and
- controller circuitry configured to:
- provide, during a row address strobe (RAS) time, information pertaining to a column repair redundancy swap for repairing a selected group of the plurality of groups, the information including a column redundancy signal and swap enabling signals;
- and
- responsive to detecting that an error condition has occurred in a failed group of the plurality of groups, implement the column repair redundancy swap for at least one column of the failed group.
6 more elements
Dependencies are inferred from the claim text.