Wafer scale active thermal interposer for device testing

A method of temperature control of a semiconductor device, the method comprising:

• disposing said semiconductor device in proximity to a thermal interposer (TI) device;
• testing circuits of said semiconductor device based on probing thereof;
• and
• during said testing, controlling temperatures of said semiconductor device by selectively providing electrical power to said TI device, wherein said TI device comprises:
• a top surface configured to receive said semiconductor device;
• a heating layer defining a plurality of independently controllable thermal zones configured to maintain or change temperatures of the top surface during said testing;
• a power input configured to receive said electrical power and wherein said electrical power is configured to be selectively applied to one or more of the plurality of independently controllable thermal zones;
• and
• an electromagnetic interference (EMI) shield layer defining said top surface and disposed to shield said top surface from EMI from said heating layer.