Wide-band photodetectors using thermoelectric materials

Abstract

Visible and infrared radiation photothermoelectric effect photodetectors are provided. The photodetectors are formed on substrates having a low thermal diffusivity of less than 0.05 mm2/sec. A thermoelectric metal chalcogenide film is formed on the low thermal diffusivity substrate. At least two symmetric electrodes are formed on the thermoelectric metal chalcogenide film such that the thermoelectric metal chalcogenide film forms a channel between the electrodes. The photodetector has a responsivity of at least approximately 65 V W−1 for 1550 nm illumination and a response time less than approximately ˜60 ms. The photodetector photoresponse is tunable via manipulation of local illumination. Examples of photodetectors use Bi2Se3, Bi2Te3, and SnSe2 on flexible polymeric substrates. By using large-area thermoelectric films with a photothermal detection mechanism, and modulating responsivity via thermal coupling, photodetector arrays for wearable electronics and integrated optoelectronic circuits may be created.

Dependencies are inferred from the claim text.