Semiconductor device measuring device and method for measuring semiconductor device

A semiconductor device measuring device comprising:

• a wafer stage comprising a reference wafer that is not doped with a dopant loaded on a first load port, and a sample wafer that is doped with the dopant loaded on a second load port, the second load port being spaced apart from the first load port in a parallel direction that is parallel to an upper surface of the reference wafer, the wafer stage being configured to be movable in the parallel direction and configured to be movable to a first position at which a first incident light is incident on the reference wafer on the first load port and a second position at which a second incident light is incident on the sample wafer on the second load port;
• a polarizer configured to be rotated and to adjust a polarization direction of the second incident light incident on the sample wafer when the wafer stage is at the second position;
• a photodetector configured to detect a second Raman scattering signal from a second reflected light reflected from the sample wafer;
• and
• at least one processor configured to:
• determine a first rotation angle based on an intensity of the second Raman scattering signal according to a rotation angle of the polarizer,
• control the wafer stage to move to the first position so that the first incident light is incident on the reference wafer, and
• control the polarizer to rotate to the first rotation angle to adjust a polarization direction of the first incident light incident on the reference wafer when the reference wafer is at the first position,
• wherein the photodetector is further configured to detect a first Raman scattering signal from first reflected light reflected from the reference wafer,
• wherein the at least one processor is further configured to determine a concentration of the dopant doped in the sample wafer based on the first Raman scattering signal and the second Raman scattering signal according to the first rotation angle, and
• wherein the at least one processor is configured to determine the first rotation angle based on the intensity of the second Raman scattering signal according to the rotation angle of the polarizer by:
• obtaining a plurality of second Raman scattering signals respectively corresponding to a plurality of rotation angles of the polarizer, the plurality of rotation angles being different from each other,
• determining a second Raman scattering signal having a maximum magnitude among the plurality of second Raman scattering signals;
• setting the first rotation angle to the rotation angle among the plurality of rotation angles that corresponds to the second Raman scattering signal having the maximum magnitude.

A method for measuring a semiconductor device, the method comprising:

• moving a wafer stage to a first position, the wafer stage including a reference wafer that is not doped with a dopant loaded on a first load port and a sample wafer that is doped with the dopant loaded on a second load port, the second load port being spaced apart from the first load port in a parallel direction that is parallel to an upper surface of the reference wafer, the wafer stage being configured to be movable in the parallel direction and configured to be movable to the first position at which light is incident on the reference wafer on the first load port and a second position at which the light is incident on the sample wafer on the second load port;
• collecting first Raman spectral information of light reflected from the reference wafer;
• detecting a first Raman scattering signal based on the first Raman spectral information;
• moving the wafer stage in the parallel direction to the second position so that the light is incident on the sample wafer;
• collecting second Raman spectral information of light reflected from the sample wafer;
• detecting a second Raman scattering signal based on the second Raman spectral information;
• generating a corrected scattering signal by correcting the second Raman scattering signal based on the first Raman scattering signal;
• and
• determining a concentration of the dopant of the sample wafer based on the corrected scattering signal,
• wherein the method further comprises setting a second rotation angle based on an intensity of the second Raman scattering signal, and controlling the first load port to rotate to the second rotation angle to rotate the reference wafer to the second rotation angle.