Electron-beam-assisted sputtering device and method therefor

An electron-beam-assisted sputtering device comprising:

• a vacuum chamber where process gas for formation of a plasma is filled at a predetermined process gas pressure;
• a target mounted within the vacuum chamber and supplied with power;
• a substrate where target atoms, sputtered by strong collision with the target by cations of the process gas present in the plasma formed on a surface of the target, are deposited;
• and
• an electron beam supply module configured to supply electrons toward the surface of the target where the plasma is formed, to maintain the plasma;
• wherein magnetic field generating means are respectively installed at both the electron beam supply module and around the target to form a magnetic field tunnel that guides a trajectory of an electron beam along a curved path toward the target, such that the target and the electron beam supply module are positioned so as not to face each other and the target is located at a distance from the electron beam supply module, thereby preventing contamination of the electron beam supply module during sputter deposition.