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US 12,540,222 B2Granted
Fluoroplastic substrate for high-speed communications and copper-clad fluoroplastic substrate for high-speed communications
AssigneeShin-Etsu Chemical Co., Ltd.
InventorsToshio Shiobara, Ryunosuke Nomura, Hajime Itokawa
Life of this patent
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Abstract
A fluoroplastic substrate for high-speed communications has a dielectric loss tangent at 40 GHz of from 0.0001 to 0.0008 and a permittivity at 40 GHz of from 2.0 to 3.2. The substrate includes a quartz glass cloth having a dielectric loss tangent at 40 GHz of from 0.0001 to 0.0008 and a fluoroplastic having a dielectric loss tangent at 40 GHz of from 0.0001 to 0.0005.
Claims3
A copper-clad fluoroplastic substrate for high-speed communications comprising:
- a fluoroplastic substrate for high-speed communications, comprising a quartz glass cloth having a dielectric loss tangent at 40 GHz of from 0.0001 to 0.0008 and a fluoroplastic having a dielectric loss tangent at 40 GHz of from 0.0001 to 0.0005, wherein the substrate has a dielectric loss tangent at 40 GHz of from 0.0001 to 0.0008 and a permittivity at 40 GHz of from 2.0 to 3.2, and
- a copper foil having a surface roughness of 1.5 μm or less,
- wherein said fluoroplastic substrate and said copper foil are bonded together by an intervening resin selected from the group consisting of bismaleimide resins and fluoroplastics.
Dependencies are inferred from the claim text.