US 12,538,814 B2Granted

Semiconductor structure with a bridge embedded therein and method manufacturing the same

AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.

InventorsMing-Fa Chen, Sung-Feng Yeh, Tzuan-Horng Liu, Chao-Wen Shih

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Abstract

A semiconductor structure includes a first semiconductor device, a second semiconductor device, a connection device and a redistribution circuit structure. The first semiconductor device is bonded on the second semiconductor device. The connection device is bonded on the second semiconductor device and arranged aside of the first semiconductor device, wherein the connection device includes a first substrate and conductive vias penetrating through the first substrate and electrically connected to the second semiconductor device. The redistribution circuit structure is located over the second semiconductor device, wherein the first semiconductor device and the connection device are located between the redistribution circuit structure and the second semiconductor device. The redistribution circuit structure and the first semiconductor device are electrically connected to the second semiconductor device through the conductive vias of the connection device.

Claims20

Dependent claims

A semiconductor structure, comprising:

a first semiconductor device and a second semiconductor device, wherein the first semiconductor device is bonded on the second semiconductor device, wherein a backside of the first semiconductor device is physically contacted to a frontside of the second semiconductor device, wherein the frontside of the second semiconductor device comprises surfaces of connecting vias and a surface of a protection layer substantially coplanar to the surfaces of the connecting vias;
a connection device, bonded on the second semiconductor device and arranged aside of the first semiconductor device, wherein the connection device comprises a first substrate and conductive vias penetrating through the first substrate and electrically connected to the second semiconductor device;
an insulating encapsulation, laterally encapsulating the first semiconductor device and the connection device, wherein the insulating encapsulation is in contact with the second semiconductor device, and a sidewall of the insulating encapsulation is substantially aligned with a sidewall of the second semiconductor device;
and
a redistribution circuit structure, located over the second semiconductor device, wherein the first semiconductor device and the connection device are located between the redistribution circuit structure and the second semiconductor device,
wherein the redistribution circuit structure and the first semiconductor device are electrically connected to the second semiconductor device through the conductive vias of the connection device.

3 more elements

A semiconductor structure, comprising:

a first integrated circuit component comprising:
a device portion;
and
at least one bridge portion having a plurality of through silicon vias,
wherein the device portion is aside of the at least one bridge portion;
a second integrated circuit component, bonded to the first integrated circuit component, wherein the device portion is electrically connected to the second integrated circuit component through the at least one bridge portion, and a backside of the first integrated circuit component is in physical contact with a frontside of the second integrated circuit component, and a bonding interface between the backside of the first integrated circuit component and the frontside of the second integrated circuit component comprises a dielectric-to-dielectric bonding interface and a metal-to-metal bonding interface;
an insulating encapsulation, laterally encapsulating the device portion and the at least one bridge portion, wherein the insulating encapsulation is in contact with the second integrated circuit component, and a sidewall of the insulating encapsulation is substantially aligned with a sidewall of the second integrated circuit component;
a redistribution circuit structure, located on and connected to the first integrated circuit component, wherein the redistribution circuit structure is electrically connected to the second integrated circuit component through the first integrated circuit component;
and
conductive terminals, located on and connecting to the redistribution circuit structure, wherein the redistribution circuit structure is located between the first integrated circuit component and the conductive terminals.

7 more elements

A method of manufacturing a semiconductor structure, comprising:

providing a first integrated circuit component comprising a device portion and at least one bridge portion aside of the device portion, the at least one bridge portion having a plurality of through silicon vias;
providing a wafer including a plurality of second integrated circuit components interconnected to each other;
bonding the first integrated circuit component to one of the plurality of second integrated circuit components to electrically connect the at least one bridge portion and the one of the plurality of second integrated circuit components through the plurality of through silicon vias, the device portion being electrically connected to the one of the plurality of second integrated circuit components through the at least one bridge portion, wherein a backside of the first integrated circuit component is in physical contact with a frontside of the one of the plurality of second integrated circuit components, and a bonding interface between the backside of the first integrated circuit component and the frontside of the one of the plurality of second integrated circuit components comprises a dielectric-to-dielectric bonding interface and a metal-to-metal bonding interface;
laterally encapsulating the device portion and the at least one bridge portion of the first integrated circuit component in an insulating encapsulation, wherein the insulating encapsulation is in contact with the plurality of second integrated circuit components;
forming a redistribution circuit structure on the first integrated circuit component to electrically connect the redistribution circuit structure and the first integrated circuit component, and the redistribution circuit structure being electrically connected to the one of the plurality of second integrated circuit components through the first integrated circuit component;
disposing conductive terminals on the redistribution circuit structure, the conductive terminals being connected to the redistribution circuit structure, and the redistribution circuit structure being located between the first integrated circuit component and the conductive terminals;
and
dicing the wafer to form the semiconductor structure, wherein in the semiconductor structure, a sidewall of the insulating encapsulation is substantially aligned with a sidewall of the one of the plurality of second integrated circuit components.

5 more elements

Dependencies are inferred from the claim text.

Facts

Application: 16/843,860Filed 8 Apr 2020 · us provisional application
Priority: 24 Jun 2019
Published: US 2020/0402942 A124 Dec 2020
Granted: 27 Jan 2026
Term ends: Not estimatedThe source records don’t support an estimate.

Classification37 codes

H10W 70/60
Package substrates; Interposers; Redistribution layers [RDL]: insulating or insulated package substrates; Interposers; Redistribution layers
H10W 90/00
Package configurations
H10W 20/023
Of interconnections within wafers or substrates: the interconnections being through-semiconductor vias
H10W 20/0234
The interconnections being through-semiconductor vias: comprising etching via holes that stop on pads or on electrodes