Methods for selectively removing material

A method, comprising:

• etching a cavity landing on a conductive structure, wherein the cavity is defined by a sidewall, and wherein etching the cavity landing on the conductive structure causes residue from the conductive structure to be located on the sidewall;
• forming a first material over the conductive structure and the sidewall, wherein a bottom portion of the first material is located over the conductive structure, and wherein a side portion of the first material is located adjacent the sidewall;
• converting the bottom portion to a second material different from the first material;
• and
• selectively removing the side portion and the residue from the sidewall.

A method, comprising:

• forming a treatable layer by depositing a layer consisting of metal over a structure;
• performing a directional treatment process on a targeted portion of the treatable layer to convert the targeted portion to a material different from a non-targeted portion of the treatable layer, wherein the directional treatment process is selected from the group consisting of nitridation, oxidation, chlorination, carbonization;
• and
• selectively removing the non-targeted portion from the structure, wherein the targeted portion remains over the structure.