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US 12,538,774 B2Granted
Interconnection structure with anti-adhesion layer
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChe-Cheng Chang, Chih-Han Lin
Life of this patent
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Abstract
A device comprises a non-insulator structure, a dielectric layer, a metal via, a metal line, and a dielectric structure. The dielectric layer is over the non-insulator structure. The metal via is in a lower portion of the dielectric layer. The metal line is in an upper portion of the dielectric layer. The dielectric structure is embedded in a recessed region in the lower portion of the dielectric layer. The dielectric structure has a tapered top portion interfacing the metal via.
Claims20
A device comprising:
- a non-insulator structure;
- a dielectric layer over the non-insulator structure;
- a metal via in a lower portion of the dielectric layer;
- a metal line in an upper portion of the dielectric layer;
- a dielectric structure embedded in a recessed region in the lower portion of the dielectric layer, the dielectric structure having a tapered top portion interfacing the metal via;
- and
- a silicon carbide layer between the non-insulator structure and the dielectric layer, wherein a bottom of the recessed region in the dielectric layer is higher than a top surface of the silicon carbide layer.
4 more elements
A device comprising:
- a conductive structure;
- a dielectric layer over the conductive structure;
- a metal via in a lower portion of the dielectric layer;
- a metal line in an upper portion of the dielectric layer;
- and
- a dielectric structure laterally between the metal via and the dielectric layer, the dielectric structure forming a first interface with the metal via, the first interface having a non-linear segment, and a linear segment extending downwardly from the non-linear segment and terminating at a position higher than a bottom surface of the metal via.
3 more elements
A device comprising:
- a metal structure;
- a dielectric layer over the metal structure;
- a metal via in a lower portion of the dielectric layer;
- a metal line in an upper portion of the dielectric layer;
- and
- a dielectric structure located between the metal via and the lower portion of the dielectric layer, and absent between the metal line and upper portion of the dielectric layer, the dielectric structure having a portion tapering upwardly, wherein the dielectric structure has a non-tapering portion below the tapering portion.
3 more elements
Dependencies are inferred from the claim text.