Method for wafer treatment
AssigneeHua Hsu Advanced Technology Co., Ltd.
InventorsMuh-Gueng Jenq, Yung-Hsiang Lin, Thi-Yen Thu Le
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Abstract
A method for wafer treatment is disclosed. A wafer is provided with a main surface, a surface layer, and a base layer. The surface layer is disposed between the main surface and the base layer, and the surface layer covers the base layer and exposes the main surface. Then, at least one laser process is performed to fully irradiate the main surface and the surface layer with a first laser to generate a plurality of optimized regions in the main surface and the surface layer, so that the optimized regions form at least one stress-relieving array.
Claims9
A method for a wafer treatment, comprising:
- providing a wafer comprising a main surface, a surface layer and a base layer, wherein the surface layer is disposed between the main surface and the base layer, and the surface layer covers the base layer to expose the main surface;
- and
- performing at least one laser process to comprehensively irradiate the main surface and the surface layer with a first laser, thereby generating a plurality of laser-treated regions on the main surface and in the surface layer, so that the laser-treated regions form at least one stress-relieving array, wherein performing the at least one laser process comprises:
- performing a first laser process to irradiate the main surface and the surface layer with the first laser, so that the plurality of laser-treated regions extends along a first direction, and a first focal offset distance of the first laser extends 50 μm along a direction from the main surface toward the base layer, and the first focal offset distance is constant.
Dependencies are inferred from the claim text.