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US 12,538,760 B2Granted
Method of manufacturing a semiconductor device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYu-Fu Wang, Shih-Ming Chang
Life of this patent
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Abstract
A method of manufacturing a semiconductor device includes forming a first tone resist layer over an underlayer. The first tone resist layer is pattern to form a first pattern exposing a portion of the underlayer. The first pattern is extended into the underlayer, and the first tone resist layer is removed. A second tone resist layer is formed over the underlayer, wherein the second tone is opposite the first tone. The second tone resist layer is patterned to form a second pattern exposing another portion of the underlayer. The second pattern is extended into underlayer, and the second tone resist layer is removed.
Claims20
A method of manufacturing a semiconductor device, comprising,
- forming an amphoteric resist layer comprising an amphoteric resist over an underlayer,
- wherein the amphoteric resist has a first development threshold at a first actinic radiation dose where the development rate changes from either a lower development rate to a higher development rate or from a higher development rate to a lower development rate, and
- the amphoteric resist has a second development threshold at a second actinic radiation dose, wherein the second actinic radiation dose has a greater intensity than the first radiation dose, where the development rate changes from either a lower development rate to a higher development rate or from a higher development rate to a lower development rate;
- exposing the amphoteric resist layer to actinic radiation using a photomask having a first region with a first absorber layer thickness T1, a second region with a second absorber layer thickness T2, and a third region with a third absorber layer thickness T3,
- wherein T1>T2>T3;
- and
- developing the exposed amphoteric resist layer to form a pattern exposing a portion of the underlayer,
- wherein the pattern has a first pitch and a second pitch different from the first pitch.
5 more elements
A method of manufacturing a semiconductor device, comprising,
- forming an amphoteric photoresist layer over a substrate;
- wherein the amphoteric resist has a first development threshold at a first actinic radiation dose having a first intensity where the development rate changes from either a lower development rate to a higher development rate or from a higher development rate to a lower development rate, and
- the amphoteric resist has a second development threshold at a second actinic radiation dose having a second intensity, wherein the second intensity is greater than the first intensity, where the development rate changes from either a lower development rate to a higher development rate or from a higher development rate to a lower development rate;
- exposing the amphoteric photoresist layer to actinic radiation,
- wherein a first region of the amphoteric resist layer is exposed to a first exposure dose D1 of actinic radiation, a second region of the amphoteric resist layer is exposed to a second dose D2 of the actinic radiation, and a third region of the amphoteric resist layer is exposed to a third dose D3 of the actinic radiation,
- wherein D1>D2>D3, and
- wherein the first region, second region, and third region are exposed during a same selective exposure operation by a same actinic radiation beam impinging on a same photomask;
- and
- developing the exposed amphoteric resist layer using a developer to form a pattern in the amphoteric photoresist layer,
- wherein the pattern has a first pitch and a second pitch different from the first pitch.
7 more elements
A method of manufacturing a semiconductor device, comprising,
- forming a hard mask layer over a substrate;
- forming an amphoteric resist layer comprising an amphoteric resist material over the hard mask layer;
- exposing the amphoteric resist layer to actinic radiation using a reflective tri-tone photomask,
- wherein a first region of the amphoteric resist layer is exposed to a first exposure dose D1 of actinic radiation, a second region of the amphoteric resist layer is exposed to a second dose D2 of the actinic radiation, and a third region of the amphoteric resist layer is exposed to a third dose D3 of the actinic radiation,
- wherein D1, D2, and D3 are different exposure doses, and
- wherein the first region, second region, and third region are exposed during a same exposure operation by a same actinic radiation beam impinging on the reflective tri-tone photomask;
- and
- developing the exposed amphoteric resist layer using a developer to form a pattern in the amphoteric photoresist layer,
- wherein after the exposing the amphoteric photoresist layer to actinic radiation the first and third regions are more soluble in the developer than the second region.
6 more elements
Dependencies are inferred from the claim text.