Treatment liquid for semiconductor with ruthenium
AssigneeTokuyama Corporation
InventorsTomoaki Sato, Yuki Kikkawa, Takafumi Shimoda, Takayuki Negishi
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Abstract
Provided is a treatment liquid for a semiconductor with ruthenium including a ligand which coordinates to ruthenium, the treatment liquid is a treatment liquid for inhibiting a ruthenium-containing gas generated when contacting a semiconductor wafer including ruthenium with the treatment liquid in a semiconductor forming process. Also provided is an inhibitor for the generation of a ruthenium-containing gas, including a compound having a carbonyl group or a heterocyclic compound. Further provided is a treatment agent for a ruthenium-containing waste liquid, including a compound having a carbonyl group or a heterocyclic compound.
Claims7
A treatment liquid for a semiconductor with ruthenium, comprising a ligand which coordinates to ruthenium and an oxidant, wherein
- the oxidant is a hypobromite ion,
- a concentration of the hypobromite ion is 0.01 to 1.9% by mass,
- the ligand which coordinates to ruthenium is a compound having a carbonyl group, and
- a concentration of the ligand which coordinates to ruthenium is 0.01 to 35% by mass.
Dependencies are inferred from the claim text.