Film formation method

A film forming method comprising:

• a first film forming process of forming a dielectric film on a first conductive film;
• a second film forming process of forming a metal oxide film on the dielectric film;
• and
• a third film forming process of forming a second conductive film on the metal oxide film,
• wherein, in the second film forming process, the metal oxide film is formed by using heated oxygen gas and vapor of an organometallic compound, and
• wherein the second film forming process comprises:
• an adsorption process of adsorbing molecules of the organometallic compound to a surface of the dielectric film by supplying the vapor of the organometallic compound to the surface of the dielectric film;
• a first purge process of purging the surface of the dielectric film to which the molecules of the organometallic compound are adsorbed with an inert gas;
• a reaction process of oxidizing the molecules of the organometallic compound adsorbed to the surface of the dielectric film by supplying the heated oxygen gas to the surface of the dielectric film to which the molecules of the organometallic compound are adsorbed;
• and
• a second purge process of purging the surface of the dielectric film to which the molecules of the organometallic compound are oxidized with the inert gas.